In this letter, we present

a method for the fabrication of electrical terminals on individual SWNTs aligned on an ST-quartz substrate and the measurement of their electrical transport properties from room temperature down to 2 K. The method consists of CVD synthesis of an individual SWNT from evaporated metal catalyst pad and shadow mask evaporation of metallic electrical contacts on the SWNT. The thickness and dimensions of the catalyst pad are optimized to yield on average one long and horizontally aligned NVP-HSP990 cell line single SWNT after CVD synthesis. In contrast to standard electron-beam lithography technique, this method has the advantage of not exposing

the SWNTs to any electron beam irradiation or chemicals that are reported to damage or/and contaminate the SWNTs [16, 17]. Furthermore, in order to minimize any damage or contamination of the SWNT before electrical properties measurements, scanning electron microscopy (SEM), Raman spectroscopy mapping, and atomic force microscopy (AFM) are performed only after all the electrical transport measurements are achieved. The electrical properties of individual SWNTs AZD9291 are measured using four-terminal method to minimize the effects of the contact resistance from the electrodes [18, 19]. The results are compared with theory and discussed in connection with the strong interaction with the substrate. Methods Figure 1 shows a schematic of the process Ureohydrolase of the synthesis of an individual SWNT and the fabrication of the electrical terminals on top of it. Titanium (Ti) film, with 2 μm thickness, is used as a shadow mask for the evaporation of cobalt catalyst pads. Catalyst pad patterns are milled in the titanium film using a focused ion beam (FIB) system (SMI9800SE, SII NanoTechnology Inc., Tokyo, Japan). The cobalt

catalyst is evaporated through the titanium mask’s patterns by electron beam (EB) evaporation, with a thickness of 2.0 nm, measured by a calibrated thickness monitor in the evaporator. After catalyst deposition, SWNTs are synthesized by thermal CVD method using a double zone furnace (ARF-30KC-W: Asahi Rika Corp., Chiba, Japan) equipped with a quartz tube of 27 mm in inner diameter. ST-cut quartz wafers (Hoffman Materials LLC., Carlisle, PA, USA), with crystallographic directions precisely defined within 0.08° by the manufacturer, are diced into rectangular substrates, with their longer side (length) exactly parallel to the x-direction of the crystal ([100] axis), which is the preferential growth direction of the SWNTs as reported by others [8, 10, 12]. The substrates are placed at the center of the downstream side of the furnace.