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with high photocatalytic activity for water splitting. J Photoch Photobio A Chem 2012, 233:65–71.CrossRef 16. Xia MX, Wang FX, Wang YC, Pan AL, VX-765 chemical structure Zou BS, Zhang QL, Wang YG: TiO 2 nanowires sensitized with CdS quantum dots and the surface photovoltage properties. Mater Lett 2010, 64:1688–1690.CrossRef 17. Li X, Xia T, Xu CH, Murowchick J, Chen XB: Synthesis and photoactivity of nanostructured CdS-TiO 2 composite catalysts. Catal Today 2014, 225:64–73.CrossRef Competing interests The click here authors declare that they have no competing interests. Authors’ contributions YL and LZ prepared the films and tested the surface topography.

X-ray diffraction was investigated by PD and XY. The surface morphology and optical properties were measured by WW and GL. MW participated in the design and coordination of this study. The calculations were carried out by YL who also wrote the manuscript. All authors read and approved the final manuscript.”
“Background Binary transition metal oxides like NiO, TiO2, and ZnO have attracted much attention in the field of resistive switching due to simple constituents, low deposition temperature, and compatibility with complementary metal-oxide semiconductor technology

[1, 2]. Interestingly, different resistive switching behaviors have been found in metal/NiO/metal when different electrode materials were employed, such as Pt, Ag, Cu, and Al [3–6]. Lee et al. have found unipolar resistive switching (URS) in Ag(Cu)/NiO/Pt SSR128129E due to the formation of an oxide layer at the metal/NiO interface [3]. Chiang et al. have demonstrated that bipolar resistive switching (BRS) in Al/NiO/indium tin oxide (ITO) as Al/NiO interfacial reaction region combined with ITO can form a dual-oxygen reservoir structure [4]. In addition, Ni/NiO/Ni with different device structure exhibits URS and BRS modes, separately driven by electrochemical- and thermal-based mechanisms [7]. Threshold resistive switching (TRS) and URS in NiO thin film were also found at different measuring temperatures by Chang et al.[8]. The occurrence of TRS and BRS in Mn-doped ZnO device was found with a higher CC by Yang et al. due to Joule heating [9].