Nano Lett 2005, 5:931–935. 10.1021/nl050462gCrossRef 29. Cai Y, Chan SK, Soar IK, Selleck Dasatinib Chan YT, Su DS, Wang N: The size-dependent growth direction of ZnSe nanowires. Adv Mater 2006, 18:109–114. 10.1002/adma.200500822CrossRef 30. Feng P, Xue XY, Liu YG, Wan Q, Wang TH: Achieving fast oxygen response in individual β-Ga 2 O 3 nanowires by ultraviolet illumination. Appl Phys Lett 2006, 89:112114. 10.1063/1.2349278CrossRef 31. Tippins H: Optical absorption and photoconductivity in the band edge of β-Ga 2 O 3 . Phys Rev 1965, 140:A316. 10.1103/PhysRev.140.A316CrossRef
32. Zhang GQ, Tateno K, Sanada H, Tawara T, Gotoh H, Nakano H: Synthesis of GaAs nanowires with very small diameters and their optical properties with the radial quantum-confinement effect. Appl Phys Lett 2009, 95:123104. 10.1063/1.3229886CrossRef VE 821 Competing interests The authors declare that they have no competing interests. Authors’ contributions NH synthesized the Ga2O3 NWs and drafted the manuscript. FW made the SEM and TEM observations, ZY carried out the XRD measurement, and SY carried out the this website reflectance spectrum. GD fabricated the NW array devices, and HL made the I-V measurement. MF made the SAED identification, and TH carried out the EDS spectrum. JCH provided the idea and completed the manuscript. All authors read and approved the final manuscript.”
“Background The novel properties of embedded metallic nanoparticles
(NPs) are currently the subject of intense research activities driven both by fundamental interest and by their possible applications. Among different possible techniques, high fluence implantation of an insoluble element in a crystalline matrix proved to be suitable in obtaining NP-based materials. The size control of NPs during implantation and subsequent annealing is one of the challenging issues of this approach, since the resulting thermal, optical, magnetic,
and superconducting properties of NPs are drastically dependent on their size [1–7]. OSBPL9 Therefore, a better understanding of the influence of synthesis parameters, such as implantation fluence and temperature, on average particle size during implantation is of major importance. In this research, we have investigated the growth kinetics of embedded Pb NPs in Al during the implantation process. The ion beam synthesized Pb NPs were observed to precipitate in a crystalline Al matrix at room temperature [8]. By comparing with the theory of NP growth mechanism, a detailed description of the Pb NP nucleation and size evolution in Al is given. Finally, we obtain estimates for the following: (i) the concentration threshold for precipitation of ion beam synthesized Pb NPs in Al and (ii) the current density-dependent diffusion coefficient of Pb atoms in Al during the implantation at room temperature. Methods Epitaxial Al film deposition Al films can be epitaxially grown on 7 × 7 reconstructed Si(111) [9].